eacvd低温合成金刚石薄膜气相动力学过程研究.pdfVIP

摘 要 摘 要 本工作采用MonteCarlo方法，根据辉光放电理论，利用“伪碰撞”技巧和 重整化方法成功模拟了电子在非均匀电场中的输运过程。通过研究电子的雪崩过 程及各种正离子的分布情况，计算了采用电子辅助热丝化学气相沉积(EACVD) 技术低温合成金刚石薄膜过程中的电场分布及其变化规律，结果指出在某些气压、 偏压下，阳极附近将出现反向电场，该反向电场在金刚石薄膜的低温合成中起重 要作用。所得结果为建立EACVD低温合成金刚石薄膜的气相动力学模型提供了 可靠的理论依据。 EACVD气相动力学模型 关键词：金刚石薄膜；MonteCarlo方法； Abstract BasedOnthe of electron in theowglowdischarge，thetransportprocess non-uniformelectricfieldhasbeen simulated MonteCarlo successfullybyadopting What an methodinthework role thesimulationisthe playsindispensableduring andtherenormalizationwhich the null—collision‘technique proceduremaps intoanother fewer avalancheof test—particleassembly consistingtest—particles．The electronsistakenintoaccountandthedistributionsofallkindsof are chargedparticles in theelectricfieldthatismoreclosedtothe the appliedobtaining fact．Subsequently ofthe variationformula electricfieldis certainofbiasesand speculated．Under results theanodethereisareverseelectricfieldthatwill indicate，near pressures，the actasan factor thediamondatlow acceleratingduring growth temperature All oftheaboveconclusionssortiereferenceforthe ofthe provide study vapor modelofthediamondfilm atlow viaEACVD dynamic grouch temperature