Radiation hardness characteristics of Si-PIN radiation detectors》.pdf

Nuclear Instruments and Methods in Physics Research A 784 (2015) 119–123 Contents lists available at ScienceDirect Nuclear Instruments and Methods in Physics Research A journal homepage: /locate/nima Radiation hardness characteristics of Si-PIN radiation detectors Manhee Jeong n, Woo Jin Jo, Han Soo Kim, Jang Ho Ha Advanced Radiation Detection Instrument Sensor Lab., Korea Atomic Energy Research Institute, Jeollabuk-do 580-185, Republic of Korea a r t i c l e i n f o a b s t r a c t Available online 13 November 2014 The Korea Atomic Energy Research Institute (KAERI) has fabricated Si-PIN radiation detectors with low Keywords: leakage current, high resistivity ( 411 kΩ cm) and low capacitance for high-energy physics and X-ray Radiation hardness spectroscopy. Floating-zone (FZ) 6-in. diameter N-type silicon wafers, with 〈1 1 1〉 crystal orientation and Si PIN radiation detector 675 μm thick, were used in the detector fabrication. The active areas are 3 mm 3 mm, 5 mm 5 mm Leakage current and 10 mm 10 mm. We used a double deep-diffused structure at the edge of the active area for Capacitance protection from the surface leakage path. We also compared the electrical performance of the Si-PIN detector with anti-reflective coating (ARC). For a detector with an active area of 3 mm 3 mm, the