波状基区a-gt的工艺研究.pdfVIP

万方数据 摘要 I 万方数据 西安理工大学硕士研究生论文 II 万方数据 Abstract Title: STUDY ON PROCESS OF A-GCT WITH THE CORRUGATED P-BASE REGION Major: Microelectronics and Solid Electronics Name: Chenkai Zhao Signature: Supervisor: Prof. Cailin Wang Signature: Abstract Corrugated P-base A-GCT is an improved power semiconductor devices based on traditional GCT, which is introduced with corrugated P-base .Compared to the traditional GCT , corrugated P-base A-GCT can greatly improve the power capacity of A-GCT , increasing the safe operating region(SOA), improving reliability of A-GCT. Therefore, the study of the process of the corrugated P-base A-GCT is very significant for the future. As an example of 4500V corrugated P-base A-GCT, firstly analysis the structural characteristics, and come up with a feasible process method of the device.Then using the simulation software ISE-TCAD simulate the single-step process and the overall process of the device, discussed the feasibility of the process,and get the optimal process conductions, and given process embodiments . Finally through experimental verification of several key process . The main contents of this paper are as follows: Firstly, the structural features and the operation principle of A-GCT with the corrugated P-base are introduced, based on structural features and the oper