SiliconandSuprasilresultswithGeNS-EGO.pptVIP

* Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007 Elisabetta Cesarini a,b), Gianpietro Cagnoli a,c), Enrico Campagna a,d), Matteo Lorenzini a,b), Giovanni Losurdo a), Filippo Martelli a,d), Francesco Piergiovanni a,d) , Flavio Vetrano a,d) INFN Sez. Firenze Università di Firenze (Dip. Astronomia e Scienza dello Spazio) University of Glasgow Università di Urbino 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007 Summary Now: We are measuring the loss angle of different interesting materials: Herasil Suprasil (annealed sample, that we are investigating with surface analysis) Silicon (we are trying to calculate the thermoelastic contribution to fit our measurements) Last ILIAS-GW meeting 26-27 October 2006 we presented: Q measurement facility Innovative nodal suspension, designed and realized (GeNS) 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007 Dissipation measurements on Suprasil samples 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007 SAMPLE: Suprasil 311 disk 75x3 mm Sapphire sphere D= 4.75 mm 3469 Hz 1° Butterfly mode Contact surface (radius 20 mm) 7890 Hz 2° Butterfly mode Q does not depend on suspension centering, in a single suspension, in the region between -30μm e +30μm with a contact surface of ~20 μm 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007 Dissipation measurements on Suprasil samples First measurement: Q(3469Hz)=2.7·106 Measurement after the annealing: Q(3469Hz)=2·107 Anneal in air (suggested by S.Penn): Raise the oven temperature to the annealing point (1120°C for Suprasil) Cool down to the strain temperature (1025°C for Suprasil) with a rate of about 10 degrees per hour -Turn off the oven and wait for cool down in 24 hours V/S = 1.3875 μm φPenn = 2 · 10-8 QPenn = 50 millions Qexp = 20 millions Taken from Mechanical Loss in Fused Sili