IRG7PH42UD1PBF.pdfVIP

PD - 97480 IRG7PH42UD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD1-EP Features • Low VCE (ON) trench IGBT technology C • Low switching losses VCES = 1200V • Square RBSOA • Ultra-low V Diode F I NOMINAL = 30A • 1300Vpk repetitive transient capacity G • 100% of the parts tested for ILM TJ(max) = 150°C • Positive VCE (ON) temperature co-efficient E • Tight parameter distribution • Lead free package n-channel VCE(on) typ. = 1.7V Benefits C C • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF • Rugged transient performance for increased reliability G C E C E • Excellent current sharing in parallel operation G • Low EMI