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Structural and magnetic properties of ZnFe204 films deposited by low sputtering power.pdf
InternationalJournalofMinerals，MetallurgyandMaterials
Volume19，Number10,Oct20t2，Page964
DOh 10．1OO7，s12613 12-0655-6
StructuralandmagneticpropertiesofZnFe204filmsdepositedbylow
sputteringpower
J／n—longLi，，ZhongYunKeSun1)Xiao。naJiangn andZhong-wenLan)
， , ，
1)StateKeyLaboratoryofElectronicThinFilmsandIntegratedDevices，UniversityofElcetronicSciencenadTeclln01ogyofChina,Chnegdu610054，China
2)No．24ResearchInstituteofChinaElectronicsTechnologyGroupCorporation,Chongqing400060，China
(Received：11November201l；revised：12Dceember2011；accepted：26Dceember2011)
Abstract：TovMidatetheCOlTectnessofhteHartman-PerdokTheory(HPT)，whichindicateshtathtefl11}planeshavehtelowestsurface
energyinspinelferrites，tlle{1l1}planeorientatedZnFe204thinfilmsonSi(100)，Si(1l1)，andSi02(500nm)／Si(1l1)substrateswereob．
minedthrougharadiofrequency(】RF)magnetronsputteringmehtodwihtalowsputteringpowerof80W．Allofhteexperimentsprovethat
theatom eneryg determinedbysputteringpowerplaysna importantroleinhteorinetatedgrowthofhteZnFe204thnifilmsnaditmatches
，
wellwiht 肿 T．nleZnFe204thinfilmsexhibitferromagnetism withamang etizationof84．25kJ／otolatroom temperature
． whichisdifferent
rfom廿1ebulkcounterpart(natiferromagneticasusua1)．TIleZnFe204thinfimlscnabeusedashigh-qualityorientedniducnigbufferlayers
forohterspinelfNi，Mn)Znferritethinfilmsandmayhavehighpotnetialnima gnetichtnifilms-baseddevices．
Keywords：htnifilms；mang etronsputtering；crysatlorineattion；fiml rgowth；surfaceenreyg ；ferromang etism
[Th／sworkwasfinanciallysupportedbytheNationalNaturalScienceFoundationofChina(NoandtheFundamentalResearch
FundsforhteCentralUniversitiesofChinaN(o．E022050205)．]
1．1ntroduction
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