Probing the Nanoscale National University of 纳米级国家大学.pptVIP

Reflection high-energy electron diffraction (RHEED) RHEED Intensity Oscillation * * PC4259 Chapter 5 Surface Processes in Materials Growth Processing Homogeneous nucleation: solid (or liquid) clusters nucleated in a supersaturated vapor of pressure P0 Thermodynamic driving force --- free energy change per unit volume of condensed phase: ΔGv = -nkT ln (P0/ P∞) (P∞: equilibrium vapor pressure over solid, n: solid atomic density) When a growing sample is nearly in equilibrium with vapor, nucleation and growth is mainly governed by thermodynamics Formation of spherical cluster of radius r: energy increase due to surface energy 4πr2γ , so total energy change: ?G r rcrit Critical cluster radius: Energy barrier: ΔGhomo(r) = (4πr3/3)ΔGv + (4πr2)γ When r rcrit, the cluster becomes thermodynamically stable Heterogeneous nucleation: clusters are formed on a substrate (Cluster/substrate interface energy ?int, substrate surface energy ?s) Truncated sphere of contact angle: When ?s ? ?int + ?, ? = 0, complete wetting When ?int ? ?s + ?, ? = 180?, spherical ball without any wetting Free energy barrier for stable nucleation: ?Ghet = ?Ghomo(2 + cos?)(1 - cos?)2/4 Hetero-nucleation barrier is significantly lower than that of homo-nucleation in general! θ = cos-1[(γs - γint)/γ] Epitaxy: Crystalline film growth on a crystalline substrate in a unique lattice orientation relationship Growth proceeds as atomic layers stacking up sequentially Three growth modes γint ≤ γs – γf γint ≤ γs – γf with misfit γint ≥ γs – γf Stranski-Krastanov growth of Ge on Si(001) 3D islands formation ~ 3.5 ML Ge, 475°C, (110nm)2 huts pyramids Wetting layer ~ 2.5 ML Ge, 475 °C, (44nm)2 4% lattice mismatch between Ge Si Atomic Processes in Nucleation Growth Adsorption, diffusion, incorporation, nucleation, desorption, coarsening Si islands on Si(001) Thermal activated process, hopping frequenc