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The application of poly-SiSiOx contacts as passivated toprear contacts in Si solar cells.pdf

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The application of poly-SiSiOx contacts as passivated toprear contacts in Si solar cells.pdf

Solar Energy Materials Solar Cells 159 (2017) 265–271 Contents lists available at ScienceDirect Solar Energy Materials Solar Cells journal homepage: /locate/solmat The application of poly-Si/SiOx contacts as passivated top/rear contacts in Si solar cells Frank Feldmann a,b,n, Christian Reichel a, Ralph Müller a,b, Martin Hermle a a Fraunhofer ISE, Heidenhofstr. 2, D-79110 Freiburg, Germany b Albert Ludwig University Freiburg, Department of Sustainable Systems Engineering, Georges-K?hler-Allee 103, D-79110 Freiburg, Germany article info Article history: Received 21 April 2016 Received in revised form 30 June 2016 Accepted 12 September 2016 Available online 23 September 2016 Keywords: Passivated contact Poly-Si contacts Tunnel oxide Surface passivation abstract Passivated contacts based on low-pressure chemical vapor deposited (LPCVD) heavily-doped poly-Si and a thin SiOx layer are explored for the application in an interdigitated back contact (IBC) solar cell. The poly-Si/SiOx contacts are realized by applying wet-chemically grown SiOx tunnel layers and amorphous Si (a-Si) layers doped via ion implantation that are subsequently transformed into poly-Si/SiOx contacts by a high temperature step. The impact of doping species, ion dose, and poly-Si thickness on the surface passivation of such contacts is studied. Excellent J0 values down to 4.5 fA/cm2 were measured for nt poly-Si contacts, while J0 values as low as 22 fA/cm2 were obtained for p t -poly-Si contacts. Solar cells with top/rear poly-Si contacts were processed and Voc values up to 709 mV and FF values above 81% were measured. Furthermore, the upper bound for the parasitic absorption losses in 10–40 nm thick poly-Si ?lms was quanti?ed to be about 0.5 mA/cm2 per 10 nm poly-Si layer thickness. 2016 Elsevier B.V. All rights reserved. 1. Introduction Carrier-selective contacts have pushed the ef?ciency of crystalline silicon (c-Si) solar cells notably in the past few years. The most well-known concept is the he