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An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers.pdf

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An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers

第 27 卷　第 3 期 2006 年 3 月半　导　体　学　报 C HIN ES E J OU RNAL O F S EMICOND U C TO RS Vol. 27 　No. 3 Mar. ,2006 3 Project supp orted by t he National Natural Science Foundation of China ( No. and t he National Natural Science Foundation of China f or Distinguished Young Scholars (No.- Corresp onding aut hor . Email : huof engwei @sohu. com 　Received 15 September 2005 , revised ma nuscrip t received 22 Nove mber 2005 ν 2006 Chinese Institute of Elect ronics An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers 3 Huo Fengwei - , Kang Renke , Guo Dongming , Zhao Fuling , and Jin Zhuji ( Key L aboratory of t he Minist ry of Education f or Precision and N on2T raditional M achining Technology , Dalian Universi t y of Technology , Dalian　116024 , China) Abstract : We p resent an imp roved angle p olishing met hod in w hich t he end of t he cover slice near t he glue layer is beveled int o a t hin , def ect2f ree wedge , t he st raight edge of w hich is used as t he datum f or measuring t he dep t h of subsurf ace damage . The bevel angle can be calculated f rom t he inte rf erence f ringes f ormed in t he wedge . The min2 imum dep t h of t he subsurf ace damage t hat can be measured by t his met hod is a f ew hundred nanometers . Our re2 sults show t hat t he met hod is st raightf orward , accurate , and convenient . Key words : silicon waf er ; subsurf ace damage ; angle p olishing ; def ect etching ; wedge f ringes PACC : 7155 E; 8170 ; 4630R CLC number : TN30511 　　　Document code : A 　　　Article ID : 025324177 (2006) 0320506205 1 　Introduction Single crystal silicon is the most important subst rate material , upon which over 90 percent of semiconductor devices are manufactured. Silicon wafer p reparation requires a series of p rocessing step s in order to at tain high performance semicon2 ductor devices. Many processing step s , such as sli2 cing ,lapping ,and grinding ,induce surface and sub2 surface damage to silicon waf