半导体物理及器件工艺ch3_金属-半导体接触讲义.pdf

1第一部分 半导体器件 第一章 pn结二极管 第二章 异质结二极管（量子阱、超晶格） 第三章 金属-半导体肖特基二极管（包括欧姆接 触和肖特基接触） 郑 新 和 第三章 金属-半导体肖特基二极管（包 括欧姆接触和肖特基接触） 3.1 金属-半导体二极管历史 3.2肖特基势垒二极管 3.3 金属-半导体的欧姆接触 2 The Nobel Prize in Physics 1909 Guglielmo Marconi Karl Ferdinand Braun (1874-1937) (1850-1918) The Nobel Prize in Physics 1909 was awarded jointly to Guglielmo Marconi and Karl Ferdinand Braun in recognition of their contributions to the development of wireless telegraphy 实际上最早具有应用的二极管是金属和半导体的 点接触二极管(1900年前后，理论发现在1874年)， 又称猫须(cat’s whisker)或晶体二极管(crystal diode) 探测器，由很细的钨丝和方铅矿PbS组成，用作 radio detector (右图)。 3.1 金属-半导体二极管(整流)历史 ? In 1874, German scientist Karl Ferdinand Braun discovered the electrical resistance of various natural and synthetic metal sulfide samples was dependent on direction. CRT in 1897, and coupled resonant circuits in wireless transmitters in 1898. ? In 1899, Jagadis Chandra Bose, professor of physics in India, used galena (PbS) crystals-metal wire to detect millimeter waves and patented it 2 years later. Bose’s detector and Marconi’s circuit was used in Marconi’s first transatlantic radio transmission in 1901. 3 ? In 1906, G.W. Pickard (American, 1877-1956) received a patent on a practical point-contact rectifier using Si. ? In 1907, George W. Pierce published a paper in Physical Review showing rectification properties of diodes made by sputtering many metals on various semiconductors (Cu2O/Cu, Se/Metal, Si/W, 见右图) with a point-contact. ? In 1926, the use of the metal–semiconductor diode rectifier was proposed by Lilienfeld in the first of his three-terminal transistor patents as the gate of the metal–semiconductor field effect transistors. ? In 1939, the correct theory of the field-effect transistor using a metal/semiconductor gate was advanced by William Shockley. 4 ? In 1939, the first theory that predicted the correct direction of rectification of the metal–semiconductor junction was given by Nevill Mott. He also found the solution for currents formula a