Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors英文文献资料.docVIP

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Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors英文文献资料.doc

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Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors英文文献资料

ActiveandPassiveElec.Comp.,2002,Vol.25,pp.215–223 ANALYSIS AND SIMULATION OF FUNCTIONAL STRESS DEGRADATION ON VDMOS POWER TRANSISTORS M.ZOAETERa,*,B.BEYDOUNa,M.HAJJARa,M.DEBSaandJ-PCHARLESb aLaboratoiredePhysiquedesMate′riaux, FacultyofScience-I,LebaneseUniversity, P.O.Box13-5789,Beirut1102-2070,Lebanon; bMate′riaux Optiques,Photonique etSyste`mes (MOPS),CLOES,Supelec,2,rueEdouardBelin,57070Metz,France (Received5September2001;In?nalform6November2001) TheuseofVDMOStransistorundercertainfunctionalstressconditionsproducesamodi?cationofitsphysicaland electrical properties. This paper explores the physical analysis and SPICE simulation of the degradation effects relatedtothecomponentmicronicstructure,andpointsoutthedegradedparametersfollowingthisstress. INTRODUCTION TheuseofVDMOStransistorinthe?eldofpowerelectronicshasincreasedwidelyduetoits highinputimpedance,easeof isolated-gridcontrolandnegativetemperaturecoef?cientof thedraincurrentthatpreventsthermalracing. TheuseofpowerVDMOSundercertainstressconditionsmayleadtoamodi?cationofits physical and electrical properties. There are many types of stress: stress by irradiation for whichthecomponentoperationisalteredfollowingtheactionoftheradiationonthematerial [1–4];thermalstresswherethetemperatureeffectisadominantfactorindegradation;and electrical stress which can arise from the application of a power surge or intense current peaks on the component grid. In an industrial circuit, the coercive use of the component satisfying a functional need often produces degradations of complicated origins. Degrada- tionscorrespondingtoafunctionalstressinaninvertercircuitarethesubjectofthiscommu- nication.Thestudyexplorestheanalysisandthesimulationofthedegradationseffectrelated tothecomponentmicronicstructureandpointsoutthesensitiveparameters.Thealterationof theseparametersmodi?estheVDMOSoperationandtheirvaluechangesgiveameasureof theirelectricalpropertiesdegradationdegreeandidenti?esthedegradationmechanisms. STRESSSTUDYINVDMOS Th