Calibration of GaAlAs Semiconductor Diode英文文献资料.docVIP

Journal of Modern Physics, 2012, 3, 1490-1493 /10.4236/jmp.2012.310184 Published Online October 2012 (http://www.SciRP.org/journal/jmp) Calibration of GaAlAs Semiconductor Diode S. B. Ota , Smita Ota 1 1,2 Institute of Physics, Bhubaneswar, India DST Project, DST, New Delhi, India Email: snehadri@ 1 2 Received July 29, 2012; revised September 1, 2012; accepted September 11, 2012 ABSTRACT The forward voltage of GaAlAs semiconductor diode has been measured in the temperature range 50 K - 300 K and for current values between 10 nA and 450 μA. The forward voltage as a function of temperature is least-squares fitted and the coefficients are given. The 1st and 2nd order least-squares fitting has high temperature root between 400 K and 950 K. The presence of the high temperature root indicates that the fitted polynomials are of similar character. The high temperature root is found to increase for the least squares fitted polynomials corresponding to higher current values. Keywords: Semiconductor; Temperature Sensors; GaAlAs 1. Introduction In the following Section 2, the experimental details are given. Section 3 gives the least-squares fittings. The pa- per concludes with the conclusions in Section 4. GaAlAs semiconductor diodes have been used in the measurement of low temperatures in the presence of magnetic field. The measurement of low temperature using GaAlAs diodes is based on the usual observation that the voltage across the forward-biased diode increases with decrease in temperature [1-5]. The behavior of the diode has been understood in terms of conduction pri- marily by recombination-generation currents given by the theory of Shockley and coworkers [6]. Below about 50 K, the forward voltage increases more rapidly as the temperature is reduced, which gives rise to a bend in the temperature dependence of forward voltage [7-9]. The diodes are generally cal