Optimization of a PVC Membrane for Reference Field Effect Transistors 英文参考文献.docVIP

Sensors 2009, 9, 2076-2087; doi:10.3390/OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Optimization of a PVC Membrane for Reference Field Effect Transistors Chao-Sung Lai 1,*, Cheng-En Lue 1, Chia-Ming Yang 2, Marek Dawgul 3 and Dorota G. Pijanowska 3 1 Department of Electronic Engineering in Chang Gung University. / 259 Wen-Hwa 1st Road, Kwei- Shan, Tao-Yuan, R.O.C., Taiwan, 333 2 Device Section, Department of WAT and Devices, Inotera Memories Inc. / 667, Fuhsing 3rd Road, Hwa-Ya Technology Park, Kwei-Shan, Tao-Yuan, Taiwan 3 Institute of Biocybernetics and Biomedical Engineering, Polish Academy of Sciences / ul. Trojdena 4, 02-109 Warsaw, Poland. * Author to whom correspondence should be addressed; E-Mail: cslai@.tw; Tel.: +886-3-2118800 ext.5786; Fax: +886-3-2118507 Received: 20 February 2009; in revised form: 9 March 2009 / Accepted: 12 March 2009 / Published: 19 March 2009 Abstract: For the miniaturization of ISFET sensing systems, the concept of a REFET with low ion sensitivity is proposed to replace the conventional reference electrodes through the arrangement of a quasi reference electrode and a differential readout circuit. In this study, an ion-unblocking membrane was used as the top layer of a REFET. To optimize the REFET performance, the influences of the silylating process, different plasticizers, and the composition of the PVC cocktails were investigated. A low sensitivity (10.4 ± 2.2 mV/pH) and high linearity (99.7 ± 0.3 %) in the range from pH 2.2 to pH 11.6 was obtained for the REFET with a 60 wt.% DNP/(DNP + PVC) membrane. To evaluate the long term stability, the drift coefficient was estimated, and for the best REFET, it was –0.74 mV/h. Two criteria for assessing the lifetime of REFETs were used, namely the increase in pH sensitivity to a value higher than 15 mV/pH and the degradation of linearity below 99 %. For the best REFET, it was approximately 15 days. Keyword