Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs 英文参考文献.docVIP

Sensors 2009, 9, 2746-2759; doi: 10.3390/OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs Jia-Hong Zhang 1, 2, Qing-An Huang 1,*, Hong Yu 1 and Shuang-Ying Lei 1 1 Key Laboratory of MEMS of Ministry of Education, Southeast University, 2 Sipailou, Nanjing, Jiangsu, People’s Republic of China; E-mails: h_yu@; lsy@ 2 College of Electronic Information Engineering, Nanjing University of Information Science Technology, 219 Ning-Lu Road, Nanjing, Jiangsu, People’s Republic of China; E-mail: zjhseu_nj@; * Author to whom correspondence should be addressed; E-mail: hqa@; Tel.: +0258821; Fax: +025Received: 22 March 2009; in revised form: 15 April 2009 / Accepted: 16 April 2009 / Published: 17 April 2009 Abstract: In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET) pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress ob