Various Structures Based on Nickel Oxide Thick Films as Gamma Radiation Sensors 英文参考文献.docVIP

Sensors 2003, 3, 176-186 sensors ISSN 1424-8220 ? 2003 by MDPI /sensors Various Structures Based on Nickel Oxide Thick Films as Gamma Radiation Sensors Khalil Arshak*, Olga Korostynska and Farah Fahim Electronic and Computer Engineering Department, University of Limerick, Plassey Technological Park, Limerick, Ireland. Tel: +353 61 20 22 67. Fax: +353 61 33 81 76. E-mail khalil.arshak@ul.ie * Author to whom correspondence should be addressed. Received:1 April 2003 / Accepted: 29 April 2003 / Published:30 June 2003 Abstract: Thick films of Nickel oxide (NiO) in the form of pn-junctions and planar structures with interdigitated electrodes were investigated for γ-radiation dosimetry purposes. Samples were fabricated using the thick film screen-printing technique. All devices were exposed to a disc-type 137 Cs source with an activity of 370 kBq. They showed an increase in the values of current with the increase in radiation dose up to a certain level. Performance parameters of the devices, such as sensitivity to γ-radiation exposure and working dose region, were found to be highly dependant on the composition of the materials used. Keywords: Nickel Oxide; Thick Films; Gamma Radiation; PN-junction; Interdigitated Electrodes Introduction Accurate dosimetry traceable to national standards underpins the protection of the general public and workers across a wide range of activities including general engineering, radiation processing, nuclear power generation, research and use of radiation in medicine and defence. To meet this demand, considerable research into new sensors is underway, including efforts to enhance the sensors performance through both the materials properties and manufacturing technologies. The development of sensors needs to take advantages of the new performances obtained by controlling the physical and chemical properties of the materials. Me