figures of merit for high-performance transparent electrodes using dip-coated silver nanowire networks数据的价值使用浸渍涂布银纳米线网络的高性能透明电极.pdfVIP

Hindawi Publishing Corporation Journal of Nanomaterials Volume 2012, Article ID 286104, 7 pages doi:10.1155/2012/286104 Research Article Figures of Merit for High-Performance Transparent Electrodes Using Dip-Coated Silver Nanowire Networks Sergio B. Sepulveda-Mora1 and Sylvain G. Cloutier2 1 Department of Electrical Computer Engineering, University of Delaware, Newark, DE 19716, USA 2 ´ Department of Electrical Engineering, Ecole de Technologie Superieure, Montreal, QC, Canada H3C 1K3 ´ ´ Correspondence should be addressed to Sergio B. Sepulveda-Mora, sergiosm@ Received 15 June 2012; Revised 20 August 2012; Accepted 21 August 2012 Academic Editor: Yanqiu Zhu Copyright © 2012 S. B. Sepulveda-Mora and S. G. Cloutier. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Homogeneous, highly conductive, and transparent silver nanowire thin films were fabricated using a simple dip-coating technique and a subsequent annealing step. Silver nanowires with two different average lengths (11 μm and 19 μm) were used in the sample preparation to analyze the dependence of the sheet resistance on the length of the one-dimensional nanostructures. The best sample had a sheet resistance of 10.2 Ω/ with optical transmittance of 89.9%. Two figures of merit, the electrical to optical conductivity ratio (σDC/σOP ) and φTC , were obtained for all the samples in order to measure their performance as transparent conductive materials. 1. Introduction