buckling of single-crystal silicon nanolines under indentation屈曲的单晶硅nanolines缩进.pdfVIP

Hindawi Publishing Corporation Journal of Nanomaterials Volume 2008, Article ID 132728, 11 pages doi:10.1155/2008/132728 Research Article Buckling of Single-Crystal Silicon Nanolines under Indentation Min K. Kang,1 Bin Li,2 Paul S. Ho,2 and Rui Huang1 1 Department of Aerospace Engineering and Engineering Mechanics, University of Texas, Austin, TX 78712, USA 2 Microelectronics Research Center, University of Texas, Austin, TX 78758, USA Correspondence should be addressed to Rui Huang, ruihuang@ Received 1 October 2007; Accepted 27 December 2007 Recommended by Junlan Wang Atomic force microscope-(AFM-) based indentation tests were performed to examine mechanical properties of parallel single- crystal silicon nanolines (SiNLs) of sub-100-nm line width, fabricated by a process combining electron-beam lithography and anisotropic wet etching. The SiNLs have straight and nearly atomically flat sidewalls, and the cross-section is almost perfectly rectangular with uniform width and height along the longitudinal direction. The measured load-displacement curves from the indentation tests show an instability with large displacement bursts at a critical load ranging from 480 μN to 700 μN. This phenomenon is attributed to a transition of the buckling mode of the SiNLs under indentation. Using a set of finite element models with postbuckling analyses, we analyze the indentation-induced buckling modes and investigate the effects of tip location, contact friction, and substrate deformation on the critical load of mode transition. The results demonstrate a unique approach for the study of nanomaterials and patterned nanostructures via a combination of experiments and modeling. Copyright © 2008 Min K. Kang et al. This is an open access article distributed under the Creative