self-consistent full-band modeling of quantum semiconductor nanostructures自洽full-band量子半导体纳米结构的建模.pdfVIP

VLSI DESIGN (C) 2001 OPA (Overseas Publishers Association) N.V. 2001, Vol. 13, Nos. 1-4, pp. 91-95 Published by license under Reprints available directly from the publisher the Gordon and Breach Science Publishers imprint, Photocopying permitted by license only member of the Taylor Francis Group. Self-consistent Full-band Modeling of Quantum Semiconductor Nanostructures FRANCESCO CHIRICO, ALDO DI CARLO and PAOLO LUGLI* INFM-Dipartimento di Ingegneria Elettronica, Universitb di Roma Tor Vergata, 00133 Roma, Italy We have developed a full-band pseudopotential-based approach to describe semi- conductor nanostructures. The method relies on the bulk Bloch functions expansion of the system wavefunction, which guarantee an efficient integration of the full-band approach in self-consistent schemes where Schroedinger and Poisson equations are solved iteratively. In order to gain efficiency of the method a suitable separation between structure dependent and material dependent contributions to the system hamiltonian is presented. Results are shown for a typical Si/SiO2 MOS structure. Keywords: Nanostructures; HEMT; Full-band; Self-consistency; Empirical pseudopotential 1. INTRODUCTION All the limitations of the EFA can be over- come by using full-band methods. In our Several semiconductor devices exploit the confine- approach we describe