silicon nitride film by inline pecvd for black silicon solar cells氮化硅薄膜的内联pecvd为.pdfVIP

Hindawi Publishing Corporation International Journal of Photoenergy Volume 2012, Article ID 971093, 5 pages doi:10.1155/2012/971093 Research Article Silicon Nitride Film by Inline PECVD for Black Silicon Solar Cells Bangwu Liu, Sihua Zhong, Jinhu Liu, Yang Xia, and Chaobo Li Key Laboratory of Microelectronics Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China Correspondence should be addressed to Bangwu Liu, liubangwu@ Received 9 May 2012; Revised 13 July 2012; Accepted 15 July 2012 Academic Editor: F. Yakuphanoglu Copyright © 2012 Bangwu Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The passivation process is of significant importance to produce high-efficiency black silicon solar cell due to its unique microstructure. The black silicon has been produced by plasma immersion ion implantation (PIII) process. And the Silicon nitride films were deposited by inline plasma-enhanced chemical vapor deposition (PECVD) to be used as the passivation layer for black silicon solar cell. The microstructure and physical properties of silicon nitride films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, and the microwave photoconductance decay (µ-PCD) method. With optimizing the PECVD parameters, the conversion efficiency of black silicon solar cell can reach as high as 16.25%. 1. Introduction passivation for multicrystalline silicon solar cell due to a