simulation of drastic lag phenomena in gaas-based fets for large voltage swing模拟大滞后现象gaas-based大型电压摆动的场效应晶体管.pdfVIP

VLSI DESIGN (C) 2001 OPA (Overseas Publishers Association) N.V. 2001, Vol. 13, Nos. 1-4, pp. 245-249 Published by license under Reprints available directly from the publisher the Gordon and Breach Science Publishers imprint, Photocopying permitted by license only member of the Taylor Francis Group. Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing K. HORIO*, Y. MITANI, A. WAKABAYASHI and N. KUROSAWA Faculty of Systems Engineering, Shibaura Institute of Technology, 307 Fukasaku, Omiya 330-8570, Japan Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abruptly. The gate-lag or slow current transient becomes more pronounced when the off-state gate voltage is more negative, because the surface-state effects or substrate-trap effects become more significant. Changes of I-V curves of GaAs MESFETs, when the drain voltage is swept with different speeds, are also simulated. When the swept time is short, the curve shows overshoot-like behavior and the kink disappears, indicating that the I-Vcharacteristics should be quite different between DC and RF conditions. Keywords: GaAs MESFET; HEMT; Gate-lag; Drain-lag; Trap; Kink phenomena 1. INTRODUCTION Therefore, in this work, we have made transient simulations of GaAs MESFETs and A1GaAs/