real-time plasma process condition sensing and abnormal process detection实时等离子体工艺条件传感和异常检测过程.pdfVIP

Sensors 2010, 10, 5703-5723; doi:10.3390/s100605703 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Real-Time Plasma Process Condition Sensing and Abnormal Process Detection Ryan Yang and Rongshun Chen * Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan; E-Mail: ryyanga@.tw * Author to whom correspondence should be addressed; E-Mail: rchen@.tw; Tel.: +886-3-574-2596; Fax: +886-3-572-2840. Received: 25 April 2010; in revised form: 15 May 2010 / Accepted: 25 May 2010 / Published: 8 June 2010 Abstract: The plasma process is often used in the fabrication of semiconductor wafers. However, due to the lack of real-time etching control, this may result in some unacceptable process performances and thus leads to significant waste and lower wafer yield. In order to maximize the product wafer yield, a timely and accurately process fault or abnormal detection in a plasma reactor is needed. Optical emission spectroscopy (OES) is one of the most frequently used metrologies in in-situ process monitoring. Even though OES has the advantage of non-invasiveness, it is required to provide a huge amount of information. As a result, the data analysis of OES becomes a big challenge. To accomplish real-time detection, this work employed the sigma matching method technique, which is the time series of OES full spectrum intensity. First, the response model of a healthy plasma spectrum