Optical and Electrical Characteristics of Amorphous InGaZnO after Thermal Annealing英文文献.pdfVIP

Mater. Res. Soc. Symp. Proc. Vol. 1109 © 2009 Materials Research Society 1109-B05-03 Optical and Electrical Characteristics of Amorphous InGaZnO after Thermal Annealing Satoshi Taniguchi, Norihiko Yamaguchi, Takao Miyajima and Masao Ikeda Photonic Devices Laboratory, Advanced Materials Laboratories, Sony Corporation, Atsugi-Tec, 4-14-1, Asahi-Cho, Atsugi-Shi, Kanagawa, 243-0014 Japan e-mail:Satoshi.Taniguchi@ ABSTRACT We studied electrical characteristics of an amorphous InGaZnO (a-IGZO) layer thermally annealed. To clarify the influence of a substrate and annealing conditions, the annealing time dependence and the depth profiles of carrier and impurity concentration were estimated using Hall effect-measurement and secondary ion-microprobe mass spectroscopy. We observed photoluminescence (PL) spectra from the a-IGZO layer as-deposited and annealed under various conditions. Intense broad deep-level emission (DLE) was detected at liquid nitrogen temperature. The PL intensity of DLE from the annealed layers was studied in relation to carrier concentration and was found to depend solely on carrier concentration despite a range of deposition and annealing conditions. To explain this result, we propose the interaction of atomic oxygen with intrinsic donor. INTRODUCTION Recently, transparent oxide semiconductors based on ZnO-materials have been attracting much attention in the field of transparent electronics and flexible electronics. Since the first demonstration of high-performance thin-film transistors (TFTs) fabricated on a plastic substrate [1], amorphous InGaZnO (a-IGZO) has been intensively studied due to its unique properties 4 2 such as transparency derived from its large band-gap, high electron mobility (∼10 cm /V-s) even in the am