Research Article Hydrogenic Donor Impurity Binding Energy…研究论文结合能量.pdfVIP

Hindawi Publishing Corporation Journal of Nanomaterials Volume 2013, Article ID 240563, 7 pages /10.1155/2013/240563 Research Article Hydrogenic-Donor Impurity Binding Energy Dependence of the Electric Field in GaAs/Alx Ga1鈭抶As Quantum Rings Guangxin Wang,1 Xiuzhi Duan,2 and Wei Chen1 1 College of Science, Hebei United University, Tangshan 063000, China 2 College of Light Industry, Hebei United University, Tangshan 063000, China Correspondence should be addressed to Guangxin Wang; guangxinwang@126.com Received 11 June 2013; Revised 2 July 2013; Accepted 2 July 2013 Academic Editor: Yogendra Mishra Copyright 漏 2013 Guangxin Wang et al. his is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Using a variational method with two-parameter trial wave function and the efective mass approximation, the binding energy of a donor impurity in GaAs/Alx Ga1鈭抶 As cylindrical quantum ring (QR) subjected to an external ield is calculated. It is shown that the donor impurity binding energy is highly dependent on the QR structure parameters (radial thickness and height), impurity position, and external electric ield. he binding energy increases inchmeal as the QR parameters (radial thickness and height) decrease until a maximum value for a central impurity and then begins to drop quickly. he applied electric ield can signiicantly modify the spread of electronic wave function in the QR and shit electronic wave function from the donor position and then leads to binding energy changes. In addition, results for the binding energies of a hydrogenic donor impurity as functions of the impurity position and applied electric ield are also p