er2o3填隙对la0.7ca0.3mno3和la0.7ca0.2sr0.1mno3体系电 磁性质的影响word格式论文.docx

优秀毕业论文 精品参考文献资料 摘 要 近年来，钙钛矿锰氧化物所表现出的巨磁阻效应引起了人们的极大的兴趣，人 们希望能使之应用到实际的生活、生产中。但是由于大的磁电阻效应需要很大的外 加磁场，而且磁电阻效应的温度区域很窄，所以一直没有得到很好的实际应用。人 们发现在多晶的锰氧化物中发现了很大的磁电阻，而且只需要很小外加的磁场，并 且能获得比较宽的温度区域，这个发现立即引起人们的特别的关注。我们把这种只 要低磁场就能产生的很大的磁电阻称为低场磁电阻(LFMR). 本文就是将母体 LCMO 和 LCSMO 分别掺入绝缘相 Er2O3，形成多晶体系，由 于晶界的效应，将会出现低场磁电阻。然后对两个复合体系的结构，表面形貌，电 输运，磁电阻，磁特性进行了分析。本文分为以下五个部分： 第一章：介绍了各种磁电阻材料的研究进展和各种磁电阻效应，重点介绍了低 场磁电阻效应，最后阐述了本论文的研究目的和选题思路。 第二章：介绍了巨磁电阻材料的制备工艺和测试方法以及 LCMO 和 LCSMO 母 体的物性，并对两种母体进行了比较。 第三章：制备了不同组分的 LCMO / Er2O3 复合材料，研究了样品的结构、表面 形貌、电输运性质、磁电阻和磁特性。 第四章：制备了不同组分的 LCSMO / Er2O3 复合材料，研究了样品的结构、电 输运性质、磁电阻和磁特性。 第五章：结论部分 关键词：钙钛矿型锰氧化物材料 固相反应法 低场磁电阻 金属-半导体转变 电磁输运行为 自旋相关理论 晶界效应 II Abstract The magnetoresistance of manganese perovskite have drawn considerable interest in recent years. People want to apply it in life and production. However, to gain a large magnetoresistance value need to apply a large magnetic field, and the temperature range is very narrow, which always limits its application. some researchers found that with a small field and wide temperature range can get very large magnetoresistance in manganites polycrystal material, which is paid more attention. The mangnetoresistance with small magnetic field is called low field magnetoresistance(LFMR) In this paper, we use manganites LCMO and LCSMO as the mother material of the composites compounding with Er2O3, the composites will form a polycrystal material and the magnetoresistance will be obtained due to the grain boundary. The structure, morphologies, the electrotransport, magnetoresistance and magnetic properties of the composites were studied .This paper consists of five chapters below. In the first chapter, the present study of MR material and kinds of MR effects were introduced. We take the LFMR as the emphasis. The research aim of my topic and the thinking of my choosing this title were expatiated in the end. In the second chapter, we introduce the prepare method and test technologies of the magnetoresistance material, and the physical p