基于忆阻器的van der pol电路特性及混沌同步研究-research on characteristics and chaos synchronization of van der pol circuit based on memristor.docxVIP

THE STUDY OF MEMRISTOR BASED VAN DER POL CIRCUIT CHARACTERISTIC AND SYNCHRONIZATIONABSTRACTThe memristor is a nonlinear two-terminal passive electronic element with memory function. In this paper, the linear drift model memristor have been theoretical analysised, the advantage of this model is the simple mathematical relationship, to simplify the analysis and simulation of the circuit, but it does not consider boundary effects of memristor, so the model is only been used in accurate insensitive case. On the basis of the linear drift model to add a window function to solve the boundary effect of this problem, the simulation can be seen that the nonlinear drift model is closer to the real situation of the memristor.Gyrator is able to convert the capacitive impedance of the capacitor element becomes the inductive impedance of the inductive element, useing rotary character can get large numerical simulated inductor, low loss. The rotary replaces large inductor with a third-order memristor, capacitor, and resistor form a new low-frequency van der Pol oscillator circuit. Through theoretical analysis, numerical simulation and circuit simulation method proved when the circuit parameters to select the appropriate value, there are a wealth of nonlinear dynamics in this circuit, proved that using gyrator to replace the large inductance in the low frequency circuits is a successful application.Finally this paper uses both the method of linear error feedback synchronization and amplitude synchronization to control chaotic system, by comparison with the results of numerical simulation can be seen that the two methods on the control of synchronous time almost the same. For linear feedback method, this article also designed the Multism circuits, the results demonstrated that the Matlab simulation results.KEY WORDS: memristor; low-pass filter circuit; van der Pol circuit; Chaos synchronization目录摘 要..................................................................... IABSTR