晶硅太阳电池组件缺陷的红外图像诊断分析-infrared image diagnosis and analysis of defects in crystalline silicon solar cell module.docxVIP

摘要摘要太阳电池组件局部缺陷严重影响组件的整体性能。目前，组件检测手段主要有 I-V 特性检测、光谱响应检测和外观目测，不能直接发现缺陷所在部位与失效原因。为快速 准确的诊断太阳电池组件的缺陷，进行了太阳电池组件缺陷的红外图像诊断研究。第一，通过研究电池组件红外图像成像机理确定了影响电致发光的因素。电致发光 原理是红外成像的物理机理，其发光强度影响太阳电池组件缺陷类型与位置的判断，而 少数载流子的扩散长度，外加正向偏压和温度是电致发光的影响因素。第二，分析了太阳电池的红外图像亮暗与电性能参数的关系。通过观察图像的亮暗 分析电池的性能，结合 I-V 测试参数总结出短路电流差值应不大于 0.35A，转换效率差 值应不大于 0.75%，超出此值红外图像亮暗异常，发电量受发电率低的电池影响。第三，太阳电池组件中各种缺陷的红外图像分析，检测各种缺陷的太阳电池组件， 对不同特征的图像进行归类，分析缺陷对输出特性的影响。第四，进行各种缺陷的红外图像处理。预处理通过采用中值滤波方法有效去除图像 中的背景噪声，保留图像的缺陷特征；图像分割用 Canny 算子进行边缘检测，用 bwperim 函数跟踪目标图像的边缘，提取了缺陷的形状特征值；图像识别通过计算隐裂的周长和 面积，根据圆形度公式可判断是否为隐裂缺陷。研究得出，太阳电池转换效率及短路电流值是影响红外图像亮暗差异的主要原因； 根据各种缺陷的图像特征，归纳出三大类缺陷，及缺陷对组件输出特性的影响，为制定 企业内部检测标准提供了参考依据；通过图像处理，确定了隐裂缺陷的判断依据，有助 于快速准确的诊断缺陷类型及所在部位，在提高生产效率的同时保证电池质量。关键词晶体硅太阳电池电致发光红外图像缺陷图像处理诊断AbstractAbstractSolar module’s local defect seriously affects its performance. At present, the main testing means have I-V characteristics detection, spectral response testing and visual appearance, which not directly found defect position and causes. For fast accurate diagnosis of solar modules, the paper researches on infrared image of silicon solar modules’ defects.First, through the research of module infrared image imaging mechanism determined the influence factors of electroluminescent. EL principle is the physical mechanism of infrared imaging, and its intensity affects the judgment of solar module defects’ types and location. The length of minority carriers, positive bias and temperature are EL influence factors.Second, analyze the relationship of the infrared images’ light and dark and performance parameters. According to I-V test parameters, this paper summarizes that short-circuit current difference should be less than 0.35A, conversion efficiency difference should be less than 0.75%, and more than the rating shows that whole string of generating capacity will be low.Third, analyze solar modules’ infrared image of various defects. Classify different image, and to analysis of the output characteristics influence of various defects.Fourth, p