1、Bipolar junction Transistor.pptVIP

Specialized English School of Physics Optoelectronic Engineering W. Zhang Chapter 2 Semiconductor Device The bipolar junction transistor (BJT) was invented in January 1948, a few weeks after the invention of the first transistor (the point-contact transistor), and months before the point-contact device was announced. The reason for the invention of the BJT is a prime object lesson in engineering practice. The point-contact transistor was fabricated by primitive and “artistic” methods, and its detailed structure and operation remain unclear to this very day. Even worse, it posed a complex three-dimensional problem. The inventor of the BJT, William Shockley, was at the time the supervisor of the two inventors (or “discoverers”) of the point-contact transistor, John Bardeen and Walter Brattain. He was endeavoring, with sound engineering instinct, to conceive of a one –dimensional analog of the point-contact device as a way of opening the door to analytical investigation of its operation. Suddenly he realized that the structure he was postulating was itself a transistor, and onto that lent itself to analysis at basic level! It became the bipolar junction transistor. Reduced to practice in 1951, it had for all practical purposes shouldered the point-contact device aside by the mid-1950s. A genuine understanding of the point-contact transistor will probably never be achieved, because it is inferior to competing devices in so many respects that it no longer arouses even academic interest. Nonetheless, its place in history is assured as the first practical amplifying device in the era of solid-state electronics. Early in the 1950s,Shockley proposed the adjective bipolar to describe his newly conceived device because both carrier types play important roles in its operation; by contrast, he described device in the field-effect family (which he also launched insofar as practical embodiments were concerned) as unipolar