掺钽氧化锌透明导电薄膜的制备 微结构及光电特性分析-preparation of tantalum - doped zinc oxide transparent conductive film and analysis of its photoelectric characteristics.docxVIP

掺钽氧化锌透明导电薄膜的制备、微结构及光电特性研究掺钽氧化锌透明导电薄膜的制备、微结构及光电特性研究AbsAbstract PAGE PAGE IVIIIIII降, 当掺杂比例为 5 wt.%时薄膜有最小电阻率 7.81×10-2 ?·cm, 电阻率的减小是由 于载流子浓度的增加引起的, 其主要来源于薄膜中的氧空位和掺杂离子替代晶 格中Zn离子产生的, 当进一步增加掺杂比例到 10 wt.%，电阻率增大到 1.25×10-1 ?·cm, 这是因为多余的Ta原子会倾向于聚集在晶格间隙处形成中性的缺陷, 导 致载流子浓度和迁移率的同时降低，电阻率呈现上升趋势; 随着退火温度的增 加，薄膜的电阻率相应的增加, 由未退火时的 6.81×10-2 ?·cm增加到500 ℃时的 1.55 ?·cm, 这是因为存在于表面和晶界的吸附态氧的影响。薄膜的光学特性测试 分析结果表明: 不同掺杂比例下制备的ZnO:Ta薄膜在可见光区域(400~800 nm)的 平均透过率均大于 85%; 光学带隙随掺杂比例先增加后减小，当掺杂比例为 5 wt.%时薄膜有最大光学带隙为 3.38 eV, 光学带隙随掺杂比例的变化可以用 Burstein-Moss效应得以解释; 随着退火温度的增加，薄膜紫外基本吸收边发生红 移; 薄膜的光学带隙随着退火温度的升高从未退火时的 3.38 eV降到500 ℃退火 下的 3.33 eV，这可由Burstein-Moss效应和量子限域效应来解释。当掺杂比例为 5wt.%时薄膜的性能指数最高，为 2.20×10-4 Ω -1; 随着退火温度的升高，薄膜的性 能指数反而下降，说明大气气氛下退火不是一种能改善ZnO:Ta薄膜光电性能的有 效方法。关键词: 透明导电薄膜, 掺钽氧化锌, 射频磁控溅射, 光电特性AbstractTransparent conducting oxides films as an important optoelectronic material have been applied extensively in the field of thin film solar cell，flat panel liquid crystal display, HYPERLINK /dict_result.aspx?searchword=%e5%8f%91%e5%85%89%e4%ba%8c%e6%9e%81%e7%ae%a1amp;tjType=sentenceamp;styleamp;t=light%2Bemitting%2Bdiode light emitting diode, and sensors due to their high optical transparence in thevisible range, high optical reflectance in the infrared range and high electrical conductivity. Among the different materials belonging to this category，zinc oxide (ZnO) is a n-type semiconductor material with a band gap of 3.3 eV and a promisingalternative to indium tin oxide (ITO) due to its benign merits, such as abundance in nature，low cost，relatively low deposition temperature and stability in hydrogen plasma. At present, some elements, such as Al，Ga，In，and B, doped ZnO-basedtransparent conducting thin films have been grown by various deposition techniques. However, looking for new materials still remains interesting and attractive.In this paper, transparent and conducting tantalum-doped zinc oxides thin films have been prepared for the first time by by RF magnetron sputtering method on glass and silicon