硅衬底gan基led光电性能及可靠性分析-photoelectric performance and reliability analysis of gan - based led based on silicon substrate.docxVIP

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硅衬底gan基led光电性能及可靠性分析-photoelectric performance and reliability analysis of gan - based led based on silicon substrate.docx

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硅衬底gan基led光电性能及可靠性分析-photoelectric performance and reliability analysis of gan - based led based on silicon substrate

AbstAbstractIIIIIIABSTRACTLED based on GaN, with its controllable panchromatic spectrum as well as excellent physical and chemical properties, has broad application prospects in a variety of areas such as lighting, backlighting and has gradually become the new generation of green illumination photosource. The current the mainstream technology program of LED illumination is the blue LED + yellow phosphor synthetic white LED, although you can get a higher luminous efficiency, isochromatic quality such as the color warm and the colored index is not good. In order to obtain a high-quality LED lighting in the true sense, white light requires a full LED mixed light, namely the use of red, green, blue three primary color LED (RGB) to obtain white light, so that you can achieve the perfect combination of low color temperature, high color rendering index as well as high efficiency. At present, the luminous efficiency of green light LED is far behind the blue and red LED, it is called Green gap in the academic circles, which has become a main technical bottlenecks to achieve RGB white light sources. Therefore, further advancing the green light LED quantum efficiency become a hot topic the field of LED in recent years. This article study thethickness of electron blocking layer（EBL）which close to the last quantum well ofsilicon substrate green light LED effects on many characteristics such as light outputpowe（rLOP）and working voltage（VF2），But the thickness of p-GaN is not changed.In addition this paper summary the relationship about the observation of the surface morphology with the monitoring concentration of Mg doped in p-GaN，At the sametime this paper summary the change about IR in the process of aging. The following research results:1、We optimize the thickness of electron blocking laye（rEBL）which closes to thelast quantum well of silicon substrate green light LED effects on many characteristics， But the thickness of p-GaN is not changed. And we also done a lot of reliabil