双轴应变si应变sige cmos关键技术分析-analysis of key technologies of si strained sige cmos with biaxial strain.docxVIP

摘要随着CMOS器件的特征尺寸进入纳米级，传统的CMOS越来越难以按照原来速度等比例缩小，因此探索新型器件材料、研究新型器件结构已经成为提高集成电路性能的必然选择。应变Si/应变SiGe具有载流子迁移率高、带隙可调等优点，而且与目前已经很成熟的Si工艺相兼容，因此是延续摩尔定律最有潜力的新技术。本文通过理论分析和仿真重点研究双轴应变Si/应变SiGeCMOS关键理论与技术，主要包括双轴应变Si、应变SiGe材料基本物理属性以及双轴应变MOS器件物理模型及其电学特性。建立双轴应变MOS的阈值电压、I-V特性等关键电学参数模型并研究了双轴应变MOS器件的几何结构和物理参数与阈值电压的理论关系。提出双轴应变Si/应变SiGeCMOS结构，分析了器件几何结构和物理参数对双轴应变SiGeCMOS性能的影响，并对其结构参数进行设计和优化。在此基础上，研究了材料制备、栅氧化、退火等关键工艺，优化实现双轴应变SiCMOS的工艺流程，实现双轴应变SiCMOS的制备，并制备出双轴应变SiCMOS逻辑电路样品。关键词：双轴应变应变Si应变SiGeCMOSAbstractAsthefeaturesizesofICenteredintothenanoscale,itismoreandmoredifficultforconventionalCMOStoscaledown.Therefore,toexplorenewdevicematerialsandnewdevicestructurehasbecomeanimportantchoicetoimprovetheperformanceofintegratedcircuit.StrainedSi/StrainedSiGehasatunablebandgap,highercarriermobility,etc.,thereforewasconsideredthemostpromisingnewtechnologiestocontinueMooresLaw.InthispapertheresearchonthekeytechniquesofbiaxiallystrainedSi/strainedSiGeCMOSisdonethroughsimulationandtheoreticalanalysisincludingthephysicalpropertiesofbiaxiallystrainedSi/strainedSiGe,modelandelectricalcharacteristicsofthebiaxiallystrainedMOSdevice.Inthisdissertation,thethresholdvoltageandI-VmodelsofthreekindsofMOSareestablished,andtherelationshipthresholdvoltageandphysicalparametersisobtainedbysimulation.TwostructuresofbiaxiallystrainedSi/strainedSiGeCMOSareproposed,andtherelationshipbetweenthebiaxiallystrainedCMOSandphysicalparametersisanalyzed.Thendesignandoptimizationstructuralparametersofitaredesignedandoptimized.Onthebasis,thekeyprocessofmaterialpreparation,gateoxidation,annealingisanalyzedandtheprocessisoptimized.Lastly,biaxiallystrainedSiCMOSanditslogiccircuitsamplesareprepared.Keywords:biaxiallystrainedstrainedSistrainedSiGeCMOS目录第一章绪论.....................................................................................................................11.1引言....................................................................................................................11.2国内外研究现状........................................