石墨烯纳米器件的设计和电学性质分析-design and electrical properties analysis of graphene nano - devices.docxVIP
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- 2018-08-01 发布于上海
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石墨烯纳米器件的设计和电学性质分析-design and electrical properties analysis of graphene nano - devices
AbstractGrapheneisatwo-dimensionalmaterial.Itisrapidlybecomingtheresearchfocusofthescientificcommunitybecauseofitsuniqueperformanceofelectrical,mechanicalandoptical.Fortheuniqueelectricalpropertiesandeasy-tailoringfeatures,grapheneisanidealmaterialfornano-electronicdevicesinpost-siliconera.Inthispaper,inthetight-bindingapproximationmodel,basedonnon-equilibriumGreenfunctionformalism(NEGF),theelectronictransportpropertiesofsomegraphene-nanoribbon-basednanostructuresarecomputed.Westudytheelectricalpropertiesoftransistorwithachannelofarmchairgraphenenanoribbon.Theresearchworkexploresphysicalinsightsofelectrontransportmechanismingraphene-nanoribbonfield-effecttransistors(GNRFET)andcanbesomeguidelinesfortheimprovementofitsperformance.Firstly,basedontheoryofgrapheneandgraphenenano-ribbon,researchGNRFET’stransportpropertieseffects,foundthatthewiderribbonwidth,theweakergatecontrolabilityofthedevice.Secondly,aparallelAGNRstructureisproposed,bycomputeandanalyzeforitsconductancecharacteristics,wefound:withtheincreaseintheribbonnumber,therewillbeacorrespondingincreasenumberofconductancepeaksintheconductancestructure,soconductivityswitchfrequencewiththeFermipotentialisfaster.Withtheincreaseofthespacingbetweentheribbons,thewidthofcenterregionisnarrower,thetwoedgesinverticaldirectionissteeper,makingitmorequicklyswitchingconverter.Thirdly,dual-materialheterogeneitygateGNRFETisproposed.Researchesshowthatithasbettersub-thresholdcharacteristicsandbiggercurrentswitchratiothansingle-materialgatedevices,whenworkfunctionofgatematerialclosetothesourceislargerthanthatofgatematerialnearthedraingate,thebettersub-thresholdcharacteristicsinthedevice.Finally,triple-materialheterogeneitygateGNRFETdeviceisproposed.Researchesshowthat,withdifferentmetalmaterialswhichhavesameworkfunctiondifferenceasgate,ithasbettersub-thresholdcharacteristicsandbiggercurrentswitchratiothandual-materialheterogeneitygateGNRFETdevice.Keywords:graphene,GNRFET,tight-bindingmodel,NEGF,transportproperties目录第一章绪论.............
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