升温速率对超高纯al-0.5％cu合金再结晶行为和微观组织影响-effect of heating rate on recrystallization behavior and microstructure of ultra-high purity al - 0.5 % cu alloy.docxVIP

中文 中文摘要 重庆大 重庆大学硕士学位论文 I I PAGE PAGE VI 摘 要 本文以电子行业广泛使用的超高纯溅射靶材 Al-0.5%Cu 合金为研究对象，采 用不同退火工艺以改善 Al-0.5%Cu 合金的微观组织从而优化靶材性能。对冷轧 90% 变形量的超高纯 Al-0.5%Cu 采用慢速升温(空气炉) 和快速升温(油浴) 两种退火工 艺进行退火，退火温度为 200℃-300℃，退火时间为 2.5min-80min。通过电子通道 衬度像 (ECC)、电子背散射衍射技术 (EBSD)，X 射线衍射 (XRD) 结合显微硬度 等综合分析手段，研究了不同退火工艺对超高纯 Al-0.5%Cu 合金靶材再结晶温度、 微观组织和再结晶行为的影响。本论文的主要结论如下： ① 快速升温退火再结晶温度为225℃，慢速升温退火再结晶温度为250℃。快 速升温退火能够降低超高纯Al-0.5%Cu的再结晶温度。 ② 升温速率影响再结晶晶粒尺寸和织构：慢速升温退火再结晶晶粒平均尺寸 为 23.7 ± 17.5μm，而快速升温退火为18.6 ± 13.7μm，快速升温退火细化再结晶晶 粒，使晶粒分布更细小均匀；快速升温退火形成随机织构。 ③ 慢速升温退火再结晶激活能为81.31 KJ/mol，快速升温退火再结晶激活能 为64.26 KJ/mol，快速升温退火降低超高纯Al-0.5%Cu的再结晶激活能。 ④ 慢速升温退火工艺制度应采用 250℃-80min，快速升温退火采用225℃ -80min。 关键词：超高纯 Al-0.5%Cu 合金, 慢速升温退火, 快速升温退火, 微观组织, 再结 晶行为 英文摘 英文摘要 重庆大 重庆大学硕士学位论文 III III PAGE PAGE IV Abstract Ultra-high purity sputtering target material Al-0.5% Cu was widely used in electronics industry. In this paper, different annealing systems were used to improve the microstructure of Al-0.5% Cu alloy so as to optimize the performance of this sputtering target. A ultra-high purity Al-0.5%Cu plate was cold rolled to 90% thickness reduction and consequently annealed at various temperatures ranged from 200 ℃ to 300℃ for different holding time (2.5-80min) by slow heating rate and rapid heating rate. The effect of heating rate on recrystallization behavior and microstructure of Al-0.5%Cu were investigated using electron channeling contrast (ECC), electron backscatter diffraction (EBSD), X-ray diffraction (XRD) and Vickers hardness testing. These following conclusions were drawn from this research: ① The recrystallization temperature for rapid heating rate annealing was 225℃， which was 250℃ for slow heating rate. Rapid heating rate annealing can lower the recrystallization temperature of high purity Al-0.5%Cu, prompting earlier recrystallization. Under the condition of same temperature, rapid heating rate annealing needed shorter time to complete recrystallization. ② The recrystallization microstructure and texture we