SrCaBi4Ti5O18基陶瓷掺杂改性及高温性能分析-材料学专业论文.docxVIP

聊城大学硕士学位论文 聊城大学硕士学位论文 PAGE PAGE iii ABSTRACT SrCaBi4Ti5O18 (SCBT) ceramics used to manufacture piezoelectric devices under high temperature due to their high Curie temperature, large anisotropy of electromeehanical coupling coefficient, high mechanical quality factor, good temperature stability and low leakage current. In this paper, the modifications of SCBT ceramics were carried out by ion substitution and oxide additive doping. The main results are listed below: Bismuth layer structured lead free piezoelectric ceramics in the system SrCaBi4-xEuxTi5O18 (x = 0, 0.02, 0.04, 0.06) and SrCaBi4-xHoxTi5O18 (x = 0, 0.02, 0.04, 0.06) have been prepared through the conventional solid-state reaction method and the microstructure, ferroelectric properties and piezoelectric properties were studied. It was found that the phase structures of both Eu3+-doped and Ho3+-doped the ceramics are pure bismuth-layered structural. The Eu3+-doping to SCBT ceramics restrained the grain growth. In addition, the piezoelectric constant d33 could be improved at the same time. The ceramics with x = 0.02 exhibited optimum properties Tc = 427 oC, d33 = 20 pC/N. The Ho3+-doped SCBT ceramics remarkably promoted the grain growth and improved the electricity constant d33. For Ho3+-doped SCBT ceramics, the ceramics exhibited optimum properties at x = 0.04, d33 = 20 pC/N, Pr = 5 μC/cm2. Bismuth layer-structured Sr1?xCaxNa0.5Bi4.5Ti5O18 (x = 0.0，0. 25，0.5，0.75，1.0) lead - free piezoelectric ceramics were prepared by solid-state reaction and the phase structure, microstructure, ferroelectric properties and piezoelectric properties were investigated. Bismuth layer structured lead free piezoelectric ceramics Sr1?xCaxNa0.5Bi4.5Ti5O18+1 wt.% CeO2 (x = 0.0，0. 25，0.5，0.75，1.0) were prepared and the Ca2+-doping to SNBT ceramics caused a remarkably promoted grain growth and improved the Curie temperature. The effects of Ca2+ on the properties of the SCBT ceramics were inv