SRAM存储器总剂量效应研究-微电子学与固体电子学专业论文.docxVIP

摘要 摘要 万方数据 万方数据 万方数据 万方数据 摘要 近年来我国航天事业迅速发展，对抗辐射集成电路的需求也在不断的增加。 存储器作为集成电路的重要组成部分，在长期空间使用中很容易发生总剂量效应。 SRAM 不仅作为最基本的存储器之一被广泛使用，而且还作为高速缓冲存储器和 寄存器堆栈被嵌入微处理器等核心器件中。因此 SRAM 的抗辐射性能决定着航天 器和卫星的控制系统电路的稳定性，开展对 SRAM 的总剂量效应研究非常有必要。 本文从半导体器件中最常用的硅材料出发，研究了 SiO2 氧化层受辐照损伤机 理和辐照效应。从 MOS 管的结构和功能出发，得出辐照对 MOS 管的总剂量效应 影响。结合 SRAM 的单元结构和功能分析得出 SRAM 的总剂量效应敏感单元是存 储阵列和敏感放大器，SRAM 辐照下失效的最劣偏置是静态偏置。设计出 SRAM 总剂量辐射效应试验的测试方案和测试系统，通过试验证明静态偏置是 SRAM 的 总剂量效应最劣偏置。 关键词： SRAM 总剂量效应 敏感性分析 测试系统 Ab Abstract 万方数据 万方数据 万方数据 万方数据 Abstract In recent years, the demand of radiation hardened integrated circuits is constantly increasing as the rapid development of Chinas aerospace industry. As important components in integrated circuits, the long-term use of memories is prone to total ionizing dose effects in space. SRAM are widely used not only as one of the basic memories, but also as cache and register stack embedded in core devices such as microprocessors. Therefore, the radiation resistance properties of SRAM determine the stability of control system circuits in spacecrafts and satellites, it is necessary for the study on total ionizing dose effects of SRAM. The content of this thesis was organized as follows. From the perspective of silicon material which is most commonly used in the semiconductor devices, researching radiation damage mechanism and effects in SiO2 oxide layer. Starting from the MOS transistor structures and functions, research the effects on total ionizing dose in the MOS transistors. Analyzing sensitive units combined the structures and functions of SRAM circuits. Drawing a conclusion that the sensitive units on total ionizing dose effects are memory array and sense amplifier. The worst bias for SRAM failure under the irradiation is static bias. Designing test plan and test system for total ionizing dose effects test of SRAM. The experiment shows that static bias is the worst bias in the total dose effect of SRAM. Key words： SRAM Total Ionizing Dose Sensitivity Analysis Test Systems