半导体基大面积纳米石墨烯膜的转移制备及其光电特征-模式识别与智能系统专业论文.docxVIP

华 华 中 科 技 大 学 硕 士 学 位 论 文 II II Abstract The development of nano-meter graphene technology indicates that the graphene with several or even one single atomic-layer of carbon structure, is a novel two-dimensional material with extraordinary optical, photoelectric, and electronic properties. The intrinsic nano-meter graphene material has very high optical transmittance and electronic mobility as a zero-band gap semiconductor material. According to its special zero-band gap and ultra-wide spectrum properties, the nano-meter graphene can be used in the next generation of photodetection, and then as a kind of photoelectric functional material can also be used in other important opto-electronic applications. Because of the very high optical transmittance and excellent electrical conductivity, the graphene can be used as a good substitute for transparent electrode such as traditional Indium tin oxide (ITO). So, the patterned graphene mask can be applied in wireless power transmission and controlling system of electrically controlled liquid crystal (LC) lens as a kind of ultra-wide spectrum, very high conductivity, and ultra-thin transparent electrode. In this paper, we firstly present the technique of transferring large-scale graphene film of about 1 cm2 from Cu substrate onto the semiconductor wafers such as Si, GaAs, etc. We research the electrical property of graphene film over different semiconductor wafers. The experiments show that the large-scale transferred graphene film fabricated by spin-coating method demonstrate required integrity and surface resistance in the range of 1kΩ/sq～10 kΩ/sq, and the transparency of more than ~80% in the visible range. Utilizing the transferred graphene films acquired, we fabricate the graphene micro-patterned structures over different semiconductor wafers, and further research the photoelectric properties of graphene mask acquired. The graphene microstructures consist of the transferred graphene film over IR wafers used and metal