一个高电源抑制比有源电感射频放大电路.PDFVIP

33 4 Vo.l 33 No. 4 2010 8 Chinese Journal of Electron Devices Aug. 2010 * AnRF AmplifierwithHighPSRR Active Inductor 1 2 1* 1 LI Zheng , LI UM engm eng , ZHAN G Sheng , L IN X iaokang 1. Gradua te sch ool a tS henzhen, Tsinghua Uni ersity, Shenzhen Guandong 518055, Ch ina; 2. Institute of m icroelectron ics, Tsinghua Uni ersity, B eij ing 100084, China Abstract: An active inductor mi plementation is presented, which can be mi plemented in the amplifiersw ithin U ltra w idebandw ireless transceivers. The mi pedance of the active inductor associated w ith other component of the circu it is analyzed. A centrefrequency tunable circuit and a supplyindependent b iasing circuit are designed, and it guarantees the active inductor#s mi pedance against sensing to the process variation and power supply variation. The circuit is de signed and mi plemented in M IC 0. 18- m CMO process. The measurement results show that the RF amplifier w ith the presented active inductor can amplify input signal to desiredmodulated signa,l the center frequency of the circu it can be tunable w ith in 0. 5~ 2 GHz, and its biasing circuit is robust even when the supply variation is as high as 0. 8V. Key words: RF IC; RF amplifier; active inductor; h ighP RR ACC: 1220 do:i 10. 3969/j. issn. 1005- 9490. 2010. 04. 006 * 1 2 1* 1 李 政 , 刘萌萌, 张 盛 , 林孝康 1. , 518055; 2. , 100084 : , , , M IC 0. 18- m , , , , 0. 5~ 2 GH z, 0. 8 V : ; ; ; : TN722. 14 :A : 1005- 9490(2010)04- 0420- 04 ,