多晶gan薄膜的制备与特性研究微电子学与固体电子学专业论文.docxVIP

山东大学硕士学位论文(Ton)，生长温度9000C，时间一个小时条件下生长的样品，其载流子迁移率达到 山东大学硕士学位论文 (Ton)，生长温度9000C，时间一个小时条件下生长的样品，其载流子迁移率达到 最大141(em2Ns)；这说明我们制备的多晶GaN薄膜样品，GaN晶粒势垒区的势 垒高度是决定载流子迁移率的重要因素。退火工艺对多晶GaN薄膜的电学性质并没 有太大的改善，表明多晶GaN薄膜的电学性质相关于许多的物理过程和物理参数， 分析清楚退火对这些不同物理过程和参数的影响和作用还需进一步深入的研究。 我们制备的多晶GaN薄膜样品的光致发光谱中主要出现了374nm 450rim三个峰，374nm对应于近带边紫外发光，通过GaN光学带隙的比较，我们认 为是带边的电子跃迁；对于400rim，来源于导带到受主CN(碳填充氮空位的受主 缺陷)的电子跃迁，而450rim左右的蓝光峰对应于深施主到受主的电子跃迁。不同 生长条件下，Ⅲ／V流量比l：250，反应压强200(Ton)，温度9000C，时间l小时 生长的薄膜具有本征发光，强度较高；反应压强造成的薄膜缺陷对膜的发光性能的 影响较大，发光峰位也有所不同。不同衬底下，蓝宝石上生长的薄膜发光强度更高， 但在430-440eV左右出现一个较宽的发光峰，说明GaN与蓝宝石衬底晶格失配较大， 需要使用缓冲层等手段来消除它对膜的影响。 关键词：多晶GaN：MOCVD；载流子浓度；迁移率；光致发光 Ⅱ 山东大学硕士学位论文AB 山东大学硕士学位论文 AB STRACT First,the poly-GaN films are prepared by MOCVD method and the preparation parameters were obtained．The influence of the preparation parameters and the annealing pmc懿s were studied systemically,which is important to the structure and component，the electrical and luminescence properties． The poly-GaN fdrns are prepared on the sificon and sapphire substrate by MOCVD method．The nilrogen and gallium precursors are ammoma and TMGa respectively． During the experiments，the flow ratio(III／V)was 1：250，1：500 and I：1 000；the chamber pressure Was 50Tort,l OOTorr,200Torr,300Tort and 400Tort；the temperature was 9000C，9500C，1 0000C and the growing time was l hour．Some films were annealed at 9000C for l or2 hours． All X—ray diffractometer patterns revealed Our fdms were poly-GaN，which could be shown according to X-ray photoelectron spectroscopy．The best deposition condition is l：250(the flow ratio)at 300Tort pressure due to the greater intensity,smaller FWHIVl, better crystallization．It is recognized that the sapphire is inore appropriate as a substrate than the silicon due to the greaer intensity of diffraction peak and the smaller FWHM． The annealing process has a important role in the selective oritentation． It is shown that the conductive type of Our films is n-type and the carrier concentration is 1018 according to t