脉冲激光沉积硅基发光薄膜及其特性研究-光学专业毕业论文.docxVIP

摘 摘 要 采用脉冲激光沉积法制各了富硅二氧化硅薄膜、Si／Si02多层薄膜。通过原 子力显微镜(AFM)、X射线衍射仪(XRD)、拉曼散射(Raman)等技术对薄膜 的表面形貌、微观结构等进行了表征。研究了气压、气氛、退火温度等工艺参数 对薄膜发光特性的影响，探讨了硅基薄膜的发光枫理。 光致荧光光谱测试表明，所制备的样品在紫外和可见光范围都有光发射，其 中紫外到紫光范围的发射光最强，蓝光次之，红光最弱。 富硅二氧化硅薄膜，以波长为270rim的紫外光为激发光，在 350nm，460rim，650rim，666nm处有发射峰出现，以波长为290nm的紫外光为激发 光，在435nm，450ran，467nm，490rim，685nm处有发射峰出现。Si／si02多层薄膜， 分别采用波长为270nm，290rim的光作为激发光，其发光峰位在 323nm，346nm，403nm，450rim一470nm，490nm，650nm，666nm，690nm处。 通过实验结果分析：我们认为红光(680rim)来源于纳米晶硅的量子限制效应 和二氧化硅的非桥键氧缺陷态的复合发光，红光(650rim)来源于纳米晶硅的量子 限制效应和二氧化硅的氧缺陷态的复合发光；而蓝光段的光发射来源于二氧化硅 的中性氧缺陷态；紫光和紫外光来源于二氧化硅的氧缺陷、纳米晶硅与二氧化硅 的界面态发光的综合效果。 硅基薄膜的红光发射与纳米晶硅密度及波尔半径内晶粒数目有着密切的关 系。制备工艺对薄膜从紫外到红光的发射中起着很重要的作用。有效的利用和控 制氧的掺杂，可以实现硅基薄膜在某个波段的光发射。 关键词：硅基薄膜脉冲激光沉积光致发光量子限制效应 I Abstractsi—rich Abstract si—rich Si02 films and Si／Si02 multilayer films were fabricated by pulsed laser deposition．The surface appearance and microstructure of the films were characterized by Atomic Force microscope(AFM)，X·ray diffraction(XRD)and Raman Scattering spectroscopy(Raman)．The effects of several experimental parameters，such gas pressure，atmosphere and anneal temperature the luminescence properties of the films were studied．The mechanism of PL property of the Si-base films was discussed． The testing of PL spectra showed that ultraviolet and visible emission can be observed in the samples，in which the emission from ultraviolet to purple has the strongest intensity and blue emission intensity is weaker,the red emission intensity is the weakest。 The emission spectra of Si·rich Si02 films have emission peaks at 350nm，460nm， 650nm and 666nm when excitated by 270nm ultraviolet．When the films were excitated by 290rim ultraviolet，the sample emission peaks at 435nm，450rim，467nm， 490nm and 685nm can be observed．The emission peaks of Si／Si02 multilayer films werc located at 323nm，346nm，403nm，450hm-470rim，490nm，650rim，666nm and 690nm when excitated by 270nm and 290nm ultraviolet． From the analysis of the experiment results we thought The red emission located at 680