硫化氢气体吸附对氧化钨纳米线电学性能调控研究-微电子学与固体电子学专业毕业论文.docxVIP

研究生优秀毕业论文 能的控制，不仅能改变忆阻特性大小，还能将W03纳米线的忆阻特 能的控制，不仅能改变忆阻特性大小，还能将W03纳米线的忆阻特 性进行反转，即将原I．V曲线表现为上相交的“8”字形改变为下相 交的“8”字形。 我们希望在后续的研究中能够针对W03纳米线对气体的吸附作 用做更多的研究，同时希望在W03纳米线忆阻效应上实现精确的控 制。 关键词：三氧化钨纳米线，电输运性能，硫化氢，忆阻，可控 II 万方数据 ABSTRACTNanotechnology ABSTRACT Nanotechnology is the backbone of the modem science and technology．One-dimensional materials have established their place as candidates for next generation nano components because they present outstanding physical and chemical properties．W03 nanowires gain extensive attention as an attractive material for electrochromism devices， gas sensors，memristors and superconductors．In this thesis，we report the observation of a new regime of operation where the memristor effect depends on various environments at room temperature．The main research results are as follows： 1．Controllable preparation of quasi-one-dimensional W03 nanostructures has been achieved through hydrothermal method，and mono．dispersed W03 nanowires have been synthesized in large scale． The W03 nanowires were characterized by SEM，XRD and EDS．The individual W03 nanowire devices with the structure of metal／W03 nanowire／metal have been fabricated by deep ultraviolet lithography and lift-off technology． 2．Measurements are then carrying out in different environment (ambient and vacuum)at room temperature．Two ohmic contacts will be formed at the two contacts between the metal electrodes and the nanowire． Furthermore，the W03 nanowires show a good memristor effects at the III 万方数据 large large voltage．Constant voltage scan with pulse were achieved to show the memristor effects more visually． 3．Electrical transport properties characterization of the W03 nanowires in air and hydrogen sulfide gas at room temperature． Experimental results indicate that H2S adsorption will decrease the resistance of the devices and even reduce the memristor effects．At the same time，we did a control experiment at different relative humidity． Experimental results verified that H20 adsorption will in