利用TCAD软件优化兼容于BCD工艺的LDMOS结构-集成电路工程专业论文.docx

Optimize the structure of a BCD compatible LDMOS by TCAD tools Abstract Use the computer aided design tools to serve the IC produce, design and study is becoming a more and more important way in IC industry of nowadays. The author of this paper use the Silvaco TCAD tools to study how to improve the breakdown voltage of a LDMOS structure which compatible with BCD process. The author has used the process simulator tool to simulate the IC produce process, the device simulate tool to test the breakdown voltage, and the plot tool to study the impact to the breakdown voltage. This paper has achieved the target of 1200V+ breakdown voltage of a LDMOS which has a 75 micronmeter wide drift region and uniform P layer, by the support of TCAD tools and latest LDMOS theory about how to improve the breakdown voltage. The major part of this paper is the discussions of how the Resurf (Reduced Surface Field) theory and double Resurf theory worked, and study the factor of epi doping, epi thickness, Ptop structure, and the gate field plate change impact to the breakdown voltage, and all these changes will not change the compatible of the reference LDMOS structure to original BCD process. The whole process and script of process simulation and device simulation of LDMOS has been shown in this paper. Keywords: TCAD; LDMOS; BCD; Breakdown Voltage; Resurf; Double Resurf 目 录 第一章 绪言 1 1.1 BCD 工艺简介： 1 1.2 DMOS 简介 2 1.3 本论文的工作内容 5 1.4 各章节的内容简介 5 第二章 BCD 技术和 LDMOS 的 Resurf 技术简介 6 2.1 BCD 技术分类： 6 BCD1(第一代 BCD 工艺): 6 高压 BCD： 8 SOIBCD： 8 高功率 BCD 9 高密度 BCD 9 RF-BCD 11 2.2 LDMOS 中的 Resurf 技术 11 2.2.1 薄 N 外延层： 13 2.2.2 场限环（Field Limiting Ring）： 13 2.2.3 阶梯场极板和斜场极板： 16 2.3 本章小结 18 第三章 Silvaco TCAD 软件介绍 19 Deckbuild 21 Optimizer 21 Athena 22 Devedit 24 Atlas 25 VWF 26 3.7 本章小结 27 第四章 LDMOS 结构及其 TCAD 内的制造过程 28 4.1 TCAD 模拟流程 28 4.2 本文所研究的 LDMOS 的结构 28 4.3 TCAD 内制作 LDMOS 的工艺流程 29 4.4 本章小结 44 第五章 通过 TCAD 仿真观察各个参数对击穿电压的影响 45 5.1 外延层厚度及外延层掺杂浓度的影响 45 5.