射频超宽带CMOS低噪声放大器的分析.pdfVIP

ABSTRACT With the increasing development of CMOS technology, the cut-off frequency of MOS device has been reached to tens even hundreds of GHz, which can satisfy the requirements of Radio Frequency Integrated circuits design. Besides, large scale application of digital integrated circuits based on CMOS technology and the developing of single on-chip system renders CMOS Radio Frequency integrated circuits get lots of attention. In wireless RF transceiver system, CMOS low noise amplifier (LNA) is the research hotspot. It is the first active module in the receiver and its main function is to provide appropriate power gain to amplify the weak RF signal from the antenna in case it is submerged by the following circuits. Different from tranditional narrow-band design, Ultra-Wide band (UWB) CMOS LNA is facing the challenges of achieving simultaneous input impedance matching, flat power gain and low noise figure (NF) in ultra-wide frequency band, besides, it should provide enough linearity to deal with the variation of input power level. In fact, all the above parameters can’t be satisfied simultaneously and need to make trade-off. Aiming at different systems, we could use corresponding techniques to improve some of the parameters. For example, wideband matching technique is employed to achieve better input matching; noise-cancelling technique can be used on lower NF goal; band-extension is used to wideband requirement; linearization technique is to improve linearity; power optimization technique is employed to lower power consumption without degrading other parameters. Three kinds of UWB LNA, which are based on the above techniques and implemented in Global Foundry 0.18µm CMOS, are proposed in this thesis. Their