等离子体物理基础(英)lecture 08-CCP Plasma Sources.pdfVIP

Lecture 08 RF Capacitively Coupled Plasma Sources 射频电容耦合等离子体源 A. Basic Electrode Geometric Configurations and Plasma Conditions 电极结构和等离子体状态 B. Electrode-Plasma Equivalent Circuit 电极-等离子体等效电路 C. Impedance Matching Network 阻抗匹配 网络 Plasma Lectures 1 RF CCP Plasma Source 射频电容耦合等离子体源基本结构 Plasma Lectures 2 Brake et al., Phys. Plasmas 6, 2307 (1999) A. Basic Geometric Configurations and Plasma Conditions A typical rf capacitively driven plasma involves two opposing parallel plate electrodes of equal area (symmetric) that are alternatively driven at the applied rf frequency 1-150 MHz at rf voltages from 100 to 1000V. The parallel plate electrodes are separated by a distance of typically 1-10 cm. Between the electrodes we launch a plane wave E into a rf gas at pressure from 10 to 1000 mTorr, causing it to ignite. After plasma ignition, the device draws rf current at a level of 2-20 A as shown in Figure 1(a). Plasma Lectures 3 s 1 Bulk Plasma v l rf f f pe rf s 2 Plasma-sheath interfaces oscillating at frf