AN-990应用笔记之IGBT的特性.pdfVIP

  Application Note AN-990 IGBT Characteristics Table of Contents Page 1. Gate Drive Requirements 2 2. Switching Trajectories and Safe Operating Area 7 3. Conduction Losses 9 4. Losses in Hard Switching 10 5. Trade-off between Conduction and Switching Losses: Device Optimization 12 6. Thermal Design 14 7. Replacing MOSFETs with IGBTs 15 8. Guidelines on Paralleling 15 This application note covers some of the major issues normally encountered in the design of an IGBT power circuits. It is the companion to AN-983, IGBT Characteristics, which covers the details of the de- vice, rather than its application. August 2012 AN-990 1    1. Gate drive Requirements A. Impact of the impedance of the gate drive circuit on switching losses As shown in the equivalent circuit of Figure 1, the IGBT consists of a PNP driven by an N-Channel MOSFET in a pseudo-Darlington configuration. The gate drive circuit controls directly the MOSFET channel of the IGBT and, through the drain current of the MOSFET, the base current of its bipolar portion. Since the turn-on char- acteristics of an IGBT are determined, to a large extent, by its MOSFET portion, the turn-on losses will be sig- nificantly affected by the gate drive impedance. Turn-off characteristics, on the other hand, are chiefly deter- mined by the minority carrier recombination mechanism, which is only indirectly affected by the MOSFET turn -off. As a result, gat