RS Components 其他智能设备 晶体管 FGH75T65SQDNL4 使用说明.pdfVIP

Product Overview FGH75T65SQDNL4: IGBT, Field Stop IV/4 Lead For complete documentation, see the data sheet. This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L package that provides significant reduction in Eon Losses compared to standard TO- 247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. Features • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Improved Gate Control Lowers Switching Losses • Separate Emitter Drive Pin • TO-247-4L for Minimal Eon Losses • Optimized for High Speed Switching • These are Pb-Free Devices Applications • Solar Inverter • Uninterruptible Power Inverter Supplies • Neutral Point Clamp Topology Part Electrical Specifications Product Compliance Status V(BR)C IC VCE(sa VF Eoff Eon Trr Irr Gate Short EAS PD Co- Pack ES Max t) Typ Typ Typ Typ Typ Typ Char Circui Typ Max Pack age Typ (A) (V) (V) (mJ) (mJ) (ns) (A) ge t (mJ) (W) aged Type (V) Typ Withs Diode (nC) tand