High_Voltage_Vertical_GaN_p-n_Diodes_With_Avalanche_Capability【搜狗文档翻译_译文_英译中】.docxVIP

IEEE

IEEETRANSACTIONSONELECTRONDEVICES,VOL.60,NO.10,OCTOBER2013

3067

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具有雪崩能力的高压垂直GaNp-n二极管

IsikC.Kizilyalli，IEEE研究员AndrewP.Edwards，IEEE高级成员HuiNie唐·迪士尼，IEEE高级成员DaveBour，IEEE研究员

摘要——本文讨论了在赝体氮化镓(GaN)衬底上制作的垂直pn结二极管。被测器件的击穿电压为2600V，差分比导通电阻为2m▲cm2。这种性能使这些结构超