FUJITSU IIC接口存储芯片MB85RC16 系列英文资料.pdf

FUJITSUSEMICONDUCTOR

DS501-00001-2v0-E

DATASHEET

MemoryFRAM

2

16K(2K×8)BitIC

MB85RC16

■DESCRIPTION

TheMB85RC16isanFRAM(FerroelectricRandomAccessMemory)chipinaconfigurationof2,048words×

8bits,usingtheferroelectricprocessandsilicongateCMOSprocesstechnologiesforformingthenonvolatile

memorycells.

UnlikeSRAM,theMB85RC16isabletoretaindatawithoutusingadatabackupbattery.

ThememorycellsusedintheMB85RC16haveatleast1010Read/Writeoperationenduranceperbit,which

isasignificantimprovementoverthenumberofreadandwriteoperationssupportedbyothernonvolatile

memoryproducts.

TheMB85RC16canprovidewritinginonebyteunitsbecausethelongwritingtimeisnotrequiredunlike

FlashmemoryandE2PROM.Therefore,thewritingcompletionwaitingsequencelikeawritebusystateis

notrequired.

■FEATURES

•Bitconfiguration:2,048words×8bits

•Operatingpowersupplyvoltage:2.7Vto3.6V

•Operatingfrequency:1MHz(Max)

•Two-wireserialinterface:Fullycontrollablebytwoports:serialclock(SCL)andserialdata(SDA).

•Operatingtemperaturerange:−40°Cto+85°C

•Dataretention:10years(+75°C)

•Read/Writeendurance:1010times

•Package:Plastic/SOP,8-pin(FPT-8P-M02)

•Lowpowerconsumption:Operatingcurrent0.1mA(Max:@1MHz),Standbycurrent0.1μA(Typ)

Copyright©2011FUJITSUSEMICONDUCTORLIMITEDAllrightsreserved

2011.6

MB85RC16

■PINASSIGNMENT

(TOPVIEW)