反应室气压对Mg掺杂GaN的影响.pdfVIP

中国科技论文在线 # 反应室气压对 Mg 掺杂 GaN 的影响 1 1 1 1 1 1 1 1,2** 朱铭 ，梁红伟 ，申人升 ，张克雄 ，夏晓川 ，宋世巍 ，柳阳 ，杜国同 （1. 大连理工大学物理与光电工程学院，辽宁 大连116023； 5 2. 电子科学与工程学院，集成光电子学国家重点实验室，长春 130012） 摘要：利用Aixtron CCS 金属有机化学气相沉积设备生长了Mg 掺杂的GaN ，通过对反应室 内气压的调节，在150mbar,250mbar,400mbar 和600mbar 气压下，制备了四个Mg 掺杂GaN 样品。利用X 射线衍射（XRD ）对样品表面形貌及界面质量进行了表征。研究表明，随着 反应室气压的增加，样品的生长速率逐渐下降，位错密度逐渐增加，Mg 的并入量减少。 10 关键词：p 型GaN；气压调节；Mg 掺杂GaN 中图分类号：O472 Effects of pressure on the Mg doped GaN layers 1 1 1 1 1 Zhu Ming , Liang Hongwei , Shen Rensheng , Zhang Kexiong , Xia Xiaochuan , Song Shiwei1 1 1,2 15 , Liu Yang , Du Guotong (1. Dalian University of Technology, LiaoNing DaLian 116023; 2. State Key Laboratory on Integrated Optoelectronics, College of Electronics Science and Engineering, Jilin University, ChangChun 130012) Abstract: A series of Mg doped GaN were grown with four different pressure using MOCVD in a 20 Aixtron CCS close-coupled showerhead reactor. The four pressure for samples were 150, 250, 400 and 600mbar respectively. The quality of samples were characterized by X-ray diffraction(XRD). The results showed that, with the increasing pressure, the growth rate of Mg doped GaN decreased but the dislocation density was deteriorated