Modeling of Track Formation in Semiconductors Irradiated with Swift Heavy Ions.pdfVIP

JournalofPhysicalScienceandApplication2(8)(2012)269-273 l鉴 H lN奄 ModelingofTrackFormationinSem iconductors IrradiatedwithSwiftHeavyIons SorayaKadidandAliMeftah LaboratoiredeRechercheenPhysico—ChimiedesSu咖cesetInterfaces，DdpartementdesSciencesde laMatibre。Facultddes Sciences，Universitd20Ao~t1955Skikda，RoutedElHadaiek,BP26,21000Skikda Algdrie ， Received：M ay19，2012／Accepted：June06，2012／Published：August15，2012 Abstract：Theinteractionoftheheavychargedparticles，ofenergyhigherthanafewMeV／amuwithsemiconductorsinglecrystalscan leadtothestructuralmodificationoftheirphysicalpropertiesandparticipateatthecreationofthedefectswhicharecalledlatenttracks ． SeveralmodelsweretestedforexplainingthetrackformationinsemiconductorsiITadiatedwithswiftheavyions ． oneofthem isthe themr alspikemode1．Thisworkshowsthattheexperimentaldataobtainedinsemiconductors ， inourcaseinInPirradiatedwithswift heavy ionscna bedescribedonthebasisofthemelilialspikemode1．TheexperimentalresultsobtainedonInPhaveallowedthe praametersofthismodeltobeunderstood．Theonlyfreeparameteristheelectron-phononcouplingconstna tgwhichisunknowninInP Thismodelallowstheevolutionoftrackradiitobefoundasafunctionofelectronicstoppingpower(dE／dx)fordifferentbeam energies．ForInPagoodagreementisobservedbetweencalculatedtrackradiina dexperimentalonesononehand ． andontheot