IGBT数值分析模型和其在NPC三电平变换器损耗分析中在应用.pdf

IGBT数值分析模型及其在NPC三电平变换器损耗分析中的应用 Abstract Inrecent theInsulatedGate been years BipolarTransistor(IGBT)haswidely usedinmodemelectronic the devicesmodelsin power technology．Usuallypower andMATLABwarearenotabletobesimulatedfor devices． PSpice directlypower While IGBT andfunctionalmodelsare used．But establishingmodel，physical widely have as itis difficultto calculation，and they manydefects，suchcomplex very modify don’t the of itisn’t∞ the consider parameters．Besides，theyimpacttemperature，SO on accuracy． perfect anew totheIGBT theinternal Thisthesis model presents easyapproach by bedivided structureand ofIGBT．Themaincontentsofthisthesiscould into principle three parts： basisofthetheoreticalisintroduced．Thisthesis Firstly,the part specifically describesthe and summarizesthe oftheIGBT．Then backgroundbriefly development the ofIGBT ofitsworkanditsbasic thecourseof evolution structure，theprinciple characteristicsare differencesbetweenthebasicstructureand introduced．Besides，the ofIGBTare detailed circuitstructure equivalent very comparativeanalyzed． 、Ⅳittl curveand