四相电压调整模块中平面型可消除直流偏磁集成磁件研究.pdfVIP

26 卷 24 期 中 国 电 机 工 程 学 报 Vol.26 No.24 Dec. 2006 2006 年12 月 Proceedings of the CSEE 2006 Chin.Soc.for Elec.Eng. 文章编号：0258-8013 (2006) 24-0179-07 中图分类号：TM46 文献标识码：A 学科分类号：47040 四相电压调整模块中 平面型可消除直流偏磁集成磁件研究 1 2 1 1 杨玉岗 ，于庆广 ，李洪珠 ，刘春喜 (1．辽宁工程技术大学电气系，辽宁省 阜新市 123000；2．清华大学电机系，北京市 海淀区 100084) Research on Planar Integrated Magnetics Whose DC-bias Can be Eliminated in 4 Phase Interleaving VRM 1 2 1 1 YANG Yu-gang , YU Qing-guang , LI Hong-zhu , LIU Chun-xi ( 1. Department of Electrical Engineering, Liaoning Technology University, Fuxin 123000, Liaoning Province, China; 2. Department of Electrical Engineering, Tsinghua University, Haidian District, Beijing 100084, China) ABSTRACT: Because of the DC-bias in the magnetics of 绕组长度小，所占VRM 主板面积小，绕组损耗小，绕组制 voltage regulation module(VRM), the size and loss can’t be 造工艺简化，铁心得 最充分利用等优点。通过仿真和实验 reduced easily, this restricts VRM’s development of low 验证了其正确性。 voltage and large current and “light, thin and small”. In order to 关键词：直流偏磁；平面集成磁件；四相交错并联；电压调 eliminate DC-bias, this paper proposed a 2-phase planar 整模块；二相集成磁件；四相集成磁件 integrated magnetics and a 4-phase planar integrated magnetics whose DC-bias in the central poles and yokes can be 0 引言 eliminated in 4-phase interleaving VRM, and gave the theory 随着微处理器的不断发展，要求为微处理器提 analysis and the electric-magnetic design of the integrated 供电能的电压调整模块(VRM)继续向着低电压大电